Dislocation-free B-doped Si crystal growth without Dash necking in Czochralski method: influence of B concentration-Reference-Cited by-同舟云学术

Dislocation-free B-doped Si crystal growth without Dash necking in Czochralski method: influence of B concentration

Published:2000-06 Issue:3-4 Volume:213 Page:283-287
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Huang Xinming,Taishi Toshinori,Yonenaga Ichiro,Hoshikawa Keigo

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference10 articles.

1. Growth of Silicon Crystals Free from Dislocations

2. Improvements on the Pedestal Method of Growing Silicon and Germanium Crystals

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4. S. Chandrasekhar, K.M. Kim, in: H.R. Huff, H. Tsuya, U. Gessele (Eds.), Semiconductor Silicon, Electrochemical Society, Pennington, 1998, Electronics Division PV 98-1, p. 411.

5. Maximum length of large diameter Czochralski silicon single crystals at fracture stress limit of seed

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