Interaction of dopant atoms with stacking faults in silicon crystals
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3490753
Reference36 articles.
1. Dislocation density reduction in multicrystalline silicon solar cell material by high temperature annealing
2. Structural Origin of a Cluster of Bright Spots in Reverse Bias Electroluminescence Image of Solar Cells Based on Si Multicrystals
3. Relaxation of strained silicon on Si0.5Ge0.5 virtual substrates
4. Application of Czochralski-grown SiGe bulk crystal as a substrate for luminescent strained quantum wells
5. Ordered Stacking Fault Arrays in Silicon Nanowires
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