Behavior of the edge dislocation propagating along the growth direction in Czochralski Si crystal growth
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference12 articles.
1. Growth of Silicon Crystals Free from Dislocations
2. Improvements on the Pedestal Method of Growing Silicon and Germanium Crystals
3. Dislocation-Free Czochralski Silicon Crystal Growth without the Dislocation-Elimination-Necking Process
4. Dislocation-free B-doped Si crystal growth without Dash necking in Czochralski method: influence of B concentration
5. Dislocation-Free Czochralski Si Crystal Growth without the Dash-Necking Process: Growth from Undoped Si Melt
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