In-situ monitoring of Si and SiGe growth on Si(001) surfaces during gas-source molecular beam epitaxy using reflectance anisotropy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
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1. In-situ crystal growth monitoring using a CCD imaging system;Sensors and Actuators A: Physical;2005-05
2. RHEED digital image analysis system for in-situ growth rate and alloy composition measurements of GaAs-based nanostructures;Semiconductor Physics, Quantum Electronics and Optoelectronics;2004-06-17
3. Analysis of growth on 75 mm Si (100) wafers by molecular beam epitaxy using in vacuo scanning tunneling microscopy;Materials Science and Engineering: B;2002-02
4. NESSPIOM?Network for enhanced semiconductor surface processing throughin situ optical monitoring;Surface and Interface Analysis;2001
5. Insights into MOCVD process control as revealed by laser interferometry;Journal of Electronic Materials;1999-06
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