Carbon doping characteristics of GaAs and Al0.3Ga0.7As grown by atmospheric pressure metalorganic chemical vapor deposition using CCl4
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
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2. Influence of growth parameters on the composition and impurity levels of intrinsically carbon doped AlxGa1−xAs;Journal of Crystal Growth;2005-10
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4. High quality p(+)-n(+)-GaAs tunnel junction diode grown by atmospheric pressure metalorganic vapour phase epitaxy;PHYS STATUS SOLIDI A;2001
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