Comparative study of amorphous and crystalline buffer layers in MBE growth of GaAs on Si
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference16 articles.
1. Material properties of high‐quality GaAs epitaxial layers grown on Si substrates
2. Effect ofinsituandexsituannealing on dislocations in GaAs on Si substrates
3. Defect reduction by thermal annealing of GaAs layers grown by molecular beam epitaxy on Si substrates
4. Characterization of epitaxially grown GaAs on Si substrates with III‐V compounds intermediate layers by metalorganic chemical vapor deposition
5. Dislocation Reduction in GaAs on Si by Thermal Cycles and InGaAs/GaAs Strained-Layer Superlattices
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1. Optimization of InAs/InGaAs quantum-dot microdisk lasers directly grown on silicon;Asia Communications and Photonics Conference;2017
2. InAs/GaAs Quantum-Dot Lasers Monolithically Grown on Si, Ge, and Ge-on-Si Substrates;IEEE Journal of Selected Topics in Quantum Electronics;2013-07
3. The effect of a-GaAs/a-Si double buffer layers on GaAs-on-Si as determined by transmission electron microscopy;Semiconductor Science and Technology;2006-05-17
4. Improved solid phase epitaxial growth of lithium tantalate thin films on sapphire, using a two‐step metalorganic chemical‐vapor deposition process;Applied Physics Letters;1993-11-08
5. Growth of GaAs on Si by employing AlAs/GaAs double amorphous buffer;Journal of Crystal Growth;1993-03
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