Study on radiative efficiency in AlGaInP/GaInP double-heterostructures: influence of deep level in cladding layers-Reference-Cited by-同舟云学术

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Study on radiative efficiency in AlGaInP/GaInP double-heterostructures: influence of deep level in cladding layers

Published:1991-12 Issue:1-4 Volume:115 Page:529-532
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Domen Kay,Sugiura Katsumi,Anayama Chikashi,Kondo Makoto,Sugawara Mitsuru,Tanahashi Toshiyuki,Nakajima Kazuo

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference8 articles.

1. Room‐temperature continuous‐wave operation of an AlGaInP double heterostructure laser grown by atmospheric pressure metalorganic chemical vapor deposition

2. Room-temperature CW operation of AlGaInP double-heterostructure visible lasers

3. Room‐temperature cw operation of InGaP/InGaAlP visible light laser diodes on GaAs substrates grown by metalorganic chemical vapor deposition

4. The influence of bulk nonradiative recombination in the wide band‐gap regions of molecular beam epitaxially grown GaAs‐AlxGa1−xAs DH lasers

Cited by 23 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Unintentional boron contamination of MBE-grown GaInP/AlGaInP quantum wells;Journal of Crystal Growth;2015-09

2. Temperature dependence of photoluminescence oxygen-related deep levels in Al[sub 0.2]Ga[sub 0.3]In[sub 0.5]P:Be grown by solid source molecular beam epitaxy;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2008

3. Optimization of 660-nm-Band AlGaInP Laser Diodes by Using Deep-Level Transient Spectroscopy Analyses;Journal of the Korean Physical Society;2007-03-15

4. AlInP–AlGaInP Quantum-Well Lasers Grown by Molecular Beam Epitaxy;IEEE Photonics Technology Letters;2006-11

5. Defect engineering for 650nm high-power AlGaInP laser diodes;Physica B: Condensed Matter;2006-04

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