Optimization of 660-nm-Band AlGaInP Laser Diodes by Using Deep-Level Transient Spectroscopy Analyses-Reference-Cited by-同舟云学术

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Optimization of 660-nm-Band AlGaInP Laser Diodes by Using Deep-Level Transient Spectroscopy Analyses

Published:2007-03-15 Issue:3 Volume:50 Page:866
ISSN:0374-4884
Container-title:Journal of the Korean Physical Society
language:en
Short-container-title:J. Korean Phys. Soc.

Author:

Shin Young Chul,Kang Dong Hoon,Kim Bum Jun,Lee Chang Yun,Ma Byung Jin,Kang Joon Seok,Lee Sang Bum,Kim Young Min,Cho Soohaeng,Park Yong Jo,Kim M. D.,Leem Shi Jong,Kim Tae Geun

Publisher

Korean Physical Society

Subject

General Physics and Astronomy

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Processes of the Reliability and Degradation Mechanism of High-Power Semiconductor Lasers;Crystals;2022-05-26

2. Threshold Current Increase in GaAs/AlGaAs Quantum Cascade Lasers due to the Thickness Variation;Journal of the Korean Physical Society;2009-04-15

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