A line-scan system to assess homogeneity of [EL2] in heat-treated LEC SI GaAs-Reference-Cited by-同舟云学术

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A line-scan system to assess homogeneity of [EL2] in heat-treated LEC SI GaAs

Published:1990-06 Issue:1-4 Volume:103 Page:102-108
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Clark S.,Brozel M.R.,Stirland D.J.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference35 articles.

1. Optical assessment of the main electron trap in bulk semi‐insulating GaAs

2. Defects and Radiation Effects in Semiconductors 1980;Martin,1981

3. Direct observation of the principal deep level (EL2) in undoped semi‐insulating GaAs

4. Microscopy of Semiconducting Materials 1987;Stirland,1987

5. Direct observation of fine structure in the concentration of the deep donor [EL2] and its correlation with dislocations in undoped, semi‐insulating GaAs

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Caveat emptor: Scan quality of Elsevier's digital backfile PDF collection;The Journal of Academic Librarianship;2023-07

2. X-ray Characterization of Defect Structure in LEC Annealed GaAs Crystals;Crystal Research and Technology;1992

3. Recognition and mapping of microdefects by photoetching, laser-scattering tomography and photoluminescence in SI undoped GaAs after different ingot-annealing treatments;Semiconductor Science and Technology;1992-01-01

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