Recognition and mapping of microdefects by photoetching, laser-scattering tomography and photoluminescence in SI undoped GaAs after different ingot-annealing treatments-Reference-Cited by-同舟云学术

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Recognition and mapping of microdefects by photoetching, laser-scattering tomography and photoluminescence in SI undoped GaAs after different ingot-annealing treatments

Published:1992-01-01 Issue:1A Volume:7 Page:A45-A52
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Weyher J L,Gall P,Dang Le Si,Fillard J P,Bonnafe J,Rufer H,Baumgartner M,Lohnert K

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0268-1242/7/i=1A/a=009/pdf

Reference29 articles.

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