High-sensitivity surface characterization with injected carriers by lasers beam using focused reflectance microwave probe method
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference11 articles.
1. Studies of deep-level defects in flash lamp annealing of ion-implanted silicon
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1. Contactless Estimation of the Surface Recombination Velocity at High-Low Junction Surfaces Fabricated by the Ion-Implantation Technique;Japanese Journal of Applied Physics;1997-02-15
2. Evaluation of the Bonded Silicon-on-Insulator Wafer with Lifetime Measurement Using a Non-Contact Laser-Microwave Method;MRS Proceedings;1994
3. Contactless characterization of the Si+ion‐implanted semi‐insulating GaAs;Journal of Applied Physics;1992-04-15
4. Double Beam Photoconductivity Modulation System and its Application to the Characterization of a Process of Photoresist Removal;MRS Proceedings;1992
5. Evaluation using A Noncontact Laser Beam Induced Conductivity/Current Method for the Silicon-on-Insulator made by Wafer Bonding;MRS Proceedings;1992
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