Contactless characterization of the Si+ion‐implanted semi‐insulating GaAs
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.350836
Reference11 articles.
1. Rapid isothermal processing
2. Spatial Inhomogeneities in Rapidly Thermal-Processed GaAs Wafer
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4. Contactless measurements of rapidly thermal processed MBE GaAs on Si and GaAs wafers
5. Contactless measurements of rapidly thermal processed MBE GaAs on Si and GaAs wafers
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1. Realization of GaN-based gain-guided blue laser diodes by helium ion implantation;Semiconductor Science and Technology;2019-10-03
2. Surface condition of Si implanted GaAs revealed by the noncontact laser/microwave method;Journal of Electronic Materials;1996-07
3. Contactless Characterization of the Surface Property of the Si+-Implanted GaAs;MRS Proceedings;1994
4. Evaluation of the Bonded Silicon-on-Insulator Wafer with Lifetime Measurement Using a Non-Contact Laser-Microwave Method;MRS Proceedings;1994
5. Contactless Characterization of The Surface Condition of Sulfur-Treated Semi-Insulating GaAs;MRS Proceedings;1993-01
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