Characteristics of facets in Si-doped GaAs crystals grown by horizontal Bridgman technique
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference12 articles.
1. A modified horizontal Bridgman technique without arsenic zone for growth of GaAs crystals
2. T.P. Chen, Y.D. Guo, T.S. Hung and L.J. Chen, to be published.
3. The growth of Si single crystals from the melt and impurity incorporation mechanisms
4. Application of Interface Demarcation to the Study of Facet Growth and Segregation: Germanium
5. Impurity Distributions in Single Crystals
Cited by 14 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Dynamics analysis of twin formation for InP and preparation of 6 inch InP single crystals;CrystEngComm;2024
2. Structural Features Associated with Twinning in the Growth of Gallium Arsenide Single Crystals by the Czochralski Method;Crystallography Reports;2020-11
3. Vertical Bridgman Growth of Binary Compound Semiconductors;Handbook of Crystal Growth;2015
4. Study on polycrystallization in bulk InxGa1−xAs using micro-Raman and photoluminescence;Journal of Crystal Growth;2004-03
5. Selecting finite element basis functions for computation of partially facetted melt/crystal interfaces appearing during the directional growth of large-scale single crystals;Modelling and Simulation in Materials Science and Engineering;2001-12-19
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3