Iron incorporation in InP layers using a ferrocene source in atmospheric pressure MOVPE-Reference-Cited by-同舟云学术

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Iron incorporation in InP layers using a ferrocene source in atmospheric pressure MOVPE

Published:1991-02 Issue:3-4 Volume:108 Page:554-560
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Robein D.,Kazmierski C.,Pougnet A.M.,Rose B.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference16 articles.

1. MOVPE growth and characteristics of Fe-doped semi-insulating InP layers

2. Proc. 14th Intern. Symp. on GaAs and Related Compounds;Nakai,1987-1988

3. Semi-insulating InP grown by low pressure MOCVD

4. 1st European Workshop on MOVPE;Dasté,1987

5. Growth of Fe-doped semi-insulating InP by MOCVD

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Homoepitaxial growth and electrical characterization of iron-doped semi-insulating 4H-SiC epilayer;Applied Physics Letters;2006-10-09

2. Growth and characteristics of Fe-doped GaN;Journal of Crystal Growth;2003-02

3. Dopant diffusion and current-voltage studies on epitaxial InP codoped with Ru and Fe;Journal of Electronic Materials;2001-08

4. Kinetic Study of InP:Fe Growth by LP-HVPE with Ferrocene as Fe Source;Journal of The Electrochemical Society;2000

5. InP:Fe semi-insulating layers by chemical beam epitaxy;Journal of Crystal Growth;1996-07

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