Growth and characteristics of Fe-doped GaN
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference13 articles.
1. I. Ben-Yaacov, Y.K. Kwang, S. Heikman, S.P. DenBaars, U.K. Mishra, Electron Device Lett., submitted for publication.
2. Degenerate layer at GaN/sapphire interface: Influence on Hall-effect measurements
3. Conductive layer near the GaN/sapphire interface and its effect on electron transport in unintentionally doped n-type GaN epilayers
4. Mechanism of Yellow Luminescence in GaN
5. Effect of structural defects and chemical impurities on hall mobilities in low pressure MOCVD grown GaN
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