InP:Fe semi-insulating layers by chemical beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference15 articles.
1. Iron‐doped semi‐insulating InP grown by chemical beam epitaxy
2. Growth of semi-insulating InP by GSMBE
3. High quality InP and In1−xGaxAsyP1−y grown by gas source MBE
4. Electrical and optical characterization of semi-insulating GaxIn1-xAsyP1-y⧸InP grown by gas source molecular beam epitaxy
5. Electrical characterization of Fe‐doped semi‐insulating InP grown by metalorganic chemical vapor deposition
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1. Terahertz-frequency photoconductive detectors fabricated from metal-organic chemical vapor deposition-grown Fe-doped InGaAs;Applied Physics Letters;2011-03-21
2. Resistivity analysis on n-semi-insulating-n and p-semi-insulating-p structures exemplified with semi-insulating InP;Journal of Applied Physics;2001-04
3. MOMBE: superior epitaxial growth for InP-based monolithically integrated photonic circuits;Journal of Crystal Growth;2000-02
4. New electrolytes for n-type InP and electrochemical C - V profiling of a semiconductor optical amplifier device structure;Journal of Solid State Electrochemistry;1999-11-03
5. Interaction between Fe, dopants, and secondary defects in MeV Fe ion implanted InP;Journal of Applied Physics;1999-01-15
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