Composition characterization methods for HgCdTe epilayers grown by molecular beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference8 articles.
1. Energy gap versus alloy composition and temperature in Hg1−xCdxTe
2. Twin-formation mechanisms for HgCdTe epilayers
3. Characteristics ofp‐njunctions fabricated on Hg1−xCdxTe epilayers grown by molecular beam epitaxy
4. (100) versus (111)B crystallographic orientation of Hg1−xCdxTe grown by molecular‐beam epitaxy
5. Highly uniform, large‐area HgCdTe layers on CdTe and CdTeSe substrates
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1. DLTS Study of Defects in HgCdTe Heterostructure Photodiode;Journal of Electronic Materials;2023-08-30
2. The method for extracting defect levels in the MCT multilayer low-bandgap heterostructures;Opto-Electronics Review;2023-02-18
3. A new method to monitor composition or cut-off wavelength variations in HgCdTe photodiode arrays using current-voltage characteristics;Semiconductor Science and Technology;2001-03-19
4. Studies of Localized Levels in HgCdTe Grown on Si and CdZnTe Substrates Using Metal-Organic Chemical Vapor Deposition;Japanese Journal of Applied Physics;1999-11-15
5. Determination of cut-off wavelength and composition distribution in Hg1-xCdxTe;Journal of Electronic Materials;1998-06
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