Studies of Localized Levels in HgCdTe Grown on Si and CdZnTe Substrates Using Metal-Organic Chemical Vapor Deposition
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Published:1999-11-15
Issue:Part 1, No. 11
Volume:38
Page:6410-6414
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ISSN:0021-4922
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Container-title:Japanese Journal of Applied Physics
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language:en
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Short-container-title:Jpn. J. Appl. Phys.
Author:
Yoshino Junya,Morimoto Jun,Wada Hideo
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Cited by
2 articles.
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1. Hg1–xCdxTe: mobility, carrier concentration;New Data and Updates for III-V, II-VI and I-VII Compounds;2010
2. Hg1–xCdxTe: activation energy;New Data and Updates for III-V, II-VI and I-VII Compounds;2010