High quality p-Cd0.22Hg0.78Te grown by liquid-phase epitaxy-Reference-Cited by-同舟云学术

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High quality p-Cd0.22Hg0.78Te grown by liquid-phase epitaxy

Published:1992-02 Issue:1-4 Volume:117 Page:16-19
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Takami Akihiro,Kawazu Zempei,Takiguchi Tohru,Mitsui Kotaro,Mizuguchi Kazuo,Murotani Toshio,Yasumura Kenji,Kanno Toshio,Saga Minoru

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference11 articles.

1. High quality planar HgCdTe photodiodes fabricated by the organometallic epitaxy (Direct Alloy Growth Process)

2. MOVPE growth of II–VI compounds in a vertical reactor with high-speed horizontal rotating disk

3. Molecular‐beam epitaxy growth andinsituarsenic doping ofp‐on‐nHgCdTe heterojunctions

4. Infrared photoconductor fabricated with a molecular beam epitaxially grown CdTe/HgCdTe heterostructure

5. Liquid Phase Growth of HgCdTe Epitaxial Layers

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Improved Passivation Effect Due to Controlled Smoothing of the CdTe-HgCdTe Interface Gradient by Thermal Annealing;Journal of Electronic Materials;2019-07-11

2. Growth of Hg1 − xCdxTe liquid phase epitaxial films on vicinal planes;Journal of Crystal Growth;1996-12

3. Morphology improvement of the Hg1–xCdxTe liquid-phase epilayers by meltback step;Physica Status Solidi (a);1996-09-16

4. Morphology investigation of Hg1 − xCdxTe liquid phase epitaxial films;Journal of Crystal Growth;1996-06

5. Influence of the liquid phase epitaxial growth conditions on composition profile for Hg1-xCdxTe film;Journal of Electronic Materials;1995-08

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