Molecular‐beam epitaxy growth andinsituarsenic doping ofp‐on‐nHgCdTe heterojunctions
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.348741
Reference15 articles.
1. Molecular beam epitaxy of II–VI compounds: CdxHg1−xTe
2. Infinite-melt vertical liquid-phase epitaxy of HgCdTe from Hg solution: Status and prospects
3. Electrical properties of Li‐doped Hg1−xCdxTe(100) by molecular beam epitaxy
4. p‐type arsenic doping of CdTe and HgTe/CdTe superlattices grown by photoassisted and conventional molecular‐beam epitaxy
5. Growth of high mobilityn‐type CdTe by photoassisted molecular beam epitaxy
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