Heteroepitaxy of InGaAs on GaAs substrate with InAlAs intermediate layer
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference11 articles.
1. MOCVD growth and characterization of GaP on Si
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1. 4 Surface and Chemical Considerations in Heteroepitaxy;Heteroepitaxy of Semiconductors;2016-09-15
2. Structural and electrophysical analysis of MHEMT In0.70Al0.30As/In0.75Ga0.25As nanoheterostructures with different strain distributions in metamorphic buffer;Crystallography Reports;2012-11
3. Structural and electrical properties of metamorphic nanoheterostructures with a high InAs content (37–100%) grown on GaAs and InP substrates;Crystallography Reports;2011-09
4. Interrelation of the construction of the metamorphic InAlAs/InGaAs nanoheterostructures with the InAs content in the active layer of 76–100% with their surface morphology and electrical properties;Semiconductors;2011-09
5. Extended wavelength InGaAs on GaAs using InAlAs buffer for back-side-illuminated short-wave infrared detectors;Applied Physics Letters;2003-04-28
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