Observation of dark line defects in InGaAs/GaAs strained layer superlattices by photoluminescence topography
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference9 articles.
1. Electrical and optical studies of dislocation filtering in InGaAs/GaAs strained‐layer superlattices
2. Inst. Phys. Conf. Ser. 91;Aydinli,1988
3. The identification of dark‐line defects in AlGaAs/InGaAs/GaAs heterostructures
4. A Simple Method for Obtaining Luminescent Pattern of Double Heterostructure Crystals
5. Proc. 2nd Intern. Symp. on Defect Recognition and Image Processing in III–V Compounds (DRIP II);Iizuka,1987
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