A self-aligned ridge substrate laser fabricated by single-step MOVPE
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference7 articles.
1. A 0.2 W CW laser with buried twin-ridge substrate structure
2. Visible GaAlAs V‐channeled substrate inner stripe laser with stabilized mode using p‐GaAs substrate
3. Single‐longitudinal‐mode metalorganic chemical‐vapor‐deposition self‐aligned GaAlAs‐GaAs double‐heterostructure lasers
4. AlGaAs/GaAs self-aligned LD's fabricated by the process containing vapor phase etching and subsequent MOVPE regrowth
5. A study of the orientation dependence of Ga(Al)As growth by MOVPE
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1. Non-planar crystal growth of Ga0.5In0.5P by metalorganic chemical vapour deposition;Journal of Crystal Growth;1997-02
2. Temperature-dependent facet development in the deposition of GaInP on non-planar surfaces;Surface Science;1997-01
3. Metalorganic vapor deposition growth of AlGaAs on a ridged GaAs(100) substrate for a low threshold current laser;Journal of Crystal Growth;1996-10
4. Low threshold current 780 nm AlGaAs buried heterostructure lasers on ridged GaAs substrate aligned to [011̄], fabricated using single-step MOCVD;Electronics Letters;1996
5. Lateralp‐njunctions in metal‐organic vapor‐phase epitaxy of AlGaAs lasers on GaAs substrates having [011] etched ridges;Applied Physics Letters;1994-03-14
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