Lateralp‐njunctions in metal‐organic vapor‐phase epitaxy of AlGaAs lasers on GaAs substrates having [011] etched ridges
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.111937
Reference15 articles.
1. High‐power buried heterostructure InGaAsP/InP laser diodes produced by an improved regrowth process
2. Self‐aligned InGaAs/GaAs/InGaP quantum well lasers prepared by gas‐source molecular beam epitaxy with two growth steps
3. Highly-reliable CW operation of 100 mW GaAlAs buried twin ridge substrate lasers with nonabsorbing mirrors
4. Highly Reliable Operation of InGaP/InGaAlP Multi-Quantum-Well Visible Laser Diodes
5. Room temperature continuous wave operation of 671 nm wavelength GaInAsP/AlGaAs VSIS lasers
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. First Fabrication of AlGaAs/GaAs Double-Heterostructure Light-Emitting Diodes Grown on GaAs(111)A Substrates Using Only Silicon Dopant;Japanese Journal of Applied Physics;1995-02-28
2. A comparison of Si-doped (100), (111) A, (111) B and (311) B AlxGa1-xAs samples grown by molecular beam epitaxy;Semiconductor Science and Technology;1995-01-01
3. Lateral p-n junctions containing p-type (311)A facets in nonplanar metalorganic vapor phase epitaxy of AlGaAs lasers;Journal of Crystal Growth;1994-10
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