Incorporation and activation of Fe in InP using low pressure MOCVD
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference17 articles.
1. Planar selective growth of InP by MOVPE
2. Semi-Insulating III-V Materials;Speier,1988
3. Selective growth of InP on patterned, nonplanar InP substrates by low-pressure organometallic vapor phase epitaxy
4. 1.55 μm buried heterostructure laser via regrowth of semi‐insulating InP:Fe around vertical mesas fabricated by reactive ion etching using methane and hydrogen
5. Low pressure MOCVD growth of buried heterostructure laser wafers using high quality semi-insulating InP
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Buried-Heterostructure Quantum Cascade Lasers Fabricated Using a Sacrificial Layer and a Two-Step Regrowth Process;ECS Transactions;2018-07-20
2. InP:Fe semi-insulating layers by chemical beam epitaxy;Journal of Crystal Growth;1996-07
3. Optimization of selective area epitaxy for fabrication of circular grating distributed-Bragg-reflector surface-emitting lasers;Journal of Crystal Growth;1993-11
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