Fabrication of AlxGa1-xAs buried heterostructure laser diodes by in-situ gas etching and selective-area metalorganic vapor phase epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference11 articles.
1. GaAs–Ga1−xAlxAs buried‐heterostructure injection lasers
2. GaAlAs buried-heterostructure lasers grown by a two-step MOCVD process
3. Selective MOCVD Growth for Application to GaAs/AlGaAs Buried Heterostructure Lasers
4. Ammonium Sulfide Passivation for AlGaAs/GaAs Buried Heterostructure Laser Fabrication Process
5. Transverse junction buried heterostructure (TJ-BH) laser diode grown by MOVPE
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1. Single-mode InGaAsP/InP BH lasers based on high-order slotted surface gratings;Optics Letters;2024-01-03
2. In-situ etching of InP and InGaAlAs materials by using HCl gas in metalorganic vapor-phase epitaxy;Journal of Crystal Growth;2004-12
3. In situDeep Etching for an InGaAlAs Buried Heterostructure by Using HCl Gas in a Metalorganic Vapor Phase Epitaxy Reactor;Japanese Journal of Applied Physics;2004-09-10
4. Surface orientation dependency for AlGaAs growth rate with/without HCl in MOCVD;Journal of Crystal Growth;2003-12
5. Analysis of leakage current in GaAs/AlGaAs buried-heterostructure lasers with a semi-insulating GaInP:Fe burying layer;Journal of Applied Physics;2002-09
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