Ammonium Sulfide Passivation for AlGaAs/GaAs Buried Heterostructure Laser Fabrication Process-Reference-Cited by-同舟云学术

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Ammonium Sulfide Passivation for AlGaAs/GaAs Buried Heterostructure Laser Fabrication Process

Published:1991-03-15 Issue:Part 1, No. 3 Volume:30 Page:499-500
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Tamanuki Takemasa,Koyama Fumio,Iga Kenichi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 22 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Epitaxial Growth of Optoelectronically Active Ga(As)Sb Quantum Dots on Al-Rich AlGaAs with GaAs Capsule Layers;Advances in Materials Science and Engineering;2021-05-19

2. Selective growth of strained (In)GaAs quantum dots on GaAs substrates employing diblock copolymer lithography nanopatterning;Journal of Crystal Growth;2017-05

3. Removal of Surface States and Recovery of Band-Edge Emission in InAs Nanowires through Surface Passivation;Nano Letters;2012-06-07

4. Sulfidic photochemical passivation of GaAs surfaces in alcoholic solutions;Journal of Applied Physics;2005-04-15

5. Chalcogenide passivation of III–V semiconductor surfaces;Semiconductors;1998-11

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