Role of the initial growth mode on the dislocation structure in MBE grown ZnSe/GaAs(100)
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference15 articles.
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5. Structural characterization of GaAs/ZnSe interfaces
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1. Epitaxial growth and the electronic structure of MgSe on ZnSe/GaAs (001);Journal of Electron Spectroscopy and Related Phenomena;2001-03
2. Growth of high quality of ZnSe epilayers on (001) vicinally oriented GaAs substrate by molecular beam epitaxy;Materials Science in Semiconductor Processing;2000-06
3. Influence of the interface layer on the strain relaxation of ZnSe epitaxial layers grown by MBE on (001)GaAs;Journal of Physics D: Applied Physics;1999-01-01
4. Quantitative growth-investigation of zincblende ZnMgSe/GaAs(0 0 1) and ZnSe/GaAs(0 0 1) by means of RHEED, HRXRD and thickness monitoring;Journal of Crystal Growth;1998-02
5. Simulations of heteroepitaxial growth;Journal of Crystal Growth;1997-07
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