Quantitative growth-investigation of zincblende ZnMgSe/GaAs(0 0 1) and ZnSe/GaAs(0 0 1) by means of RHEED, HRXRD and thickness monitoring

Author:

Frey Thomas,Reisinger Thomas,Folger Bernhard,Kastner Marcus,Gebhardt Wolfgang

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference18 articles.

1. Zn1−xMgxSe Samples and a ZnSe/Zn0.93Mg0.07Se Quantum Well under Pressure: Optical Absorption and Photoluminescence

2. E. Griebl, W. Kerner, B. Haserer, T. Reisinger, B. Hahn, W. Gebhardt, Acta Phys. Polon., to appear.

3. MBE growth mechanisms of ZnSe: Flux ratio and substrate temperature

4. The Technology and Physics of Molecular Beam Epitaxy;Yao,1989

5. Studies in the growth of ZnSe on GaAs(001)

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