In-situ X-ray imaging of III–V strained-layer relaxation processes-Reference-Cited by-同舟云学术

In-situ X-ray imaging of III–V strained-layer relaxation processes

Published:1995-05 Issue: Volume:150 Page:85-91
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Whitehouse C.R.,Cullis A.G.,Barnett S.J.,Usher B.F.,Clark G.F.,Keir A.M.,Tanner B.K.,Lunn B.,Hogg J.C.H.,Johnson A.D.,Lacey G.,Spirkl W.,Hagston W.E.,Jefferson J.H.,Ashu P.,Smith G.W.,Martin T.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference11 articles.

1. Misfit dislocation characteristics in quarternary heterojunctions Ga1-xAlxAs1-yPy/GaAs analysed by synchrotron radiation white beam topography

2. Synchrotron-radiation plane-wave topography I. Application to misfit dislocation imaging in III-V heterojunctions

3. X‐ray topography of the coherency breakdown in GexSi1−x/Si(100)

4. Nucleation of misfit dislocations in strained-layer InGaAs on GaAs

5. An MBE growth facility for real‐time in situ synchrotron x‐ray topography studies of strained‐layer III–V epitaxial materials

Cited by 28 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Characterization of defects and strain in the (AlxGa(1−x))0.5In0.5P/ GaAs system by synchrotron X-ray topography;Journal of Crystal Growth;2020-03

2. Real-time structural analysis of InGaAs/InAs/GaAs(1 1 1)A interfaces by in situ synchrotron X-ray reciprocal space mapping;Journal of Crystal Growth;2019-04

3. Direct observation of stacking fault shrinkage in 4H-SiC at high temperatures by in-situ X-ray topography using monochromatic synchrotron radiation;Applied Physics Letters;2018-07-02

4. Interfaces;Materials Science and Technology;2013-02-15

5. Real-time observation of anisotropic strain relaxation by three-dimensional reciprocal space mapping during InGaAs/GaAs (001) growth;Applied Physics Letters;2010-07-26