Enhancement of electron mobility by preventing pit formation at the In0.52Al0.48As/In0.8Ga0.2As heterointerface using an inserted In0.53Ga0.47As layer-Reference-Cited by-同舟云学术

Enhancement of electron mobility by preventing pit formation at the In0.52Al0.48As/In0.8Ga0.2As heterointerface using an inserted In0.53Ga0.47As layer

Published:1995-05 Issue: Volume:150 Page:1220-1224
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Nakayama Tatsuo,Miyamoto Hironobu,Oishi Emi,Samoto Norihiko

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference6 articles.

1. W-band low-noise InAlAs/InGaAs lattice-matched HEMTs

2. 50-nm self-aligned-gate pseudomorphic AlInAs/GaInAs high electron mobility transistors

3. Characteristics of 0.8- and 0.2- mu m gate length In/sub x/Ga/sub 1-x/As/In/sub 0.52/Al/sub 0.48/As/InP (0.53>or=x>or=0.70) modulation-doped field-effect transistors at cryogenic temperatures

4. Calculation of critical layer thickness versus lattice mismatch for GexSi1−x/Si strained‐layer heterostructures

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1. Growth parameter optimization and interface treatment for enhanced electron mobility in heavily strained GaInAs/AlInAs high electron mobility transistor structures;Journal of Applied Physics;2014-01-28

2. Effect of strain on band structure and electron transport in InAs;Solid-State Electronics;1999-09

3. High electron mobility 18300 cm2/V·s in the InAIAs/lnGaAs pseudomorphic structure obtained by channel indium composition modulation;Journal of Electronic Materials;1996-05

4. Some effects of indium composition on pseudomorphic modulation-doped heterostructures grown by molecular beam epitaxy;Journal of Crystal Growth;1996-02