Growth parameter optimization and interface treatment for enhanced electron mobility in heavily strained GaInAs/AlInAs high electron mobility transistor structures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4863332
Reference14 articles.
1. Microwave performance of InAlAs/InGaAs/InP MODFET's
2. 0.10 /spl mu/m graded InGaAs channel InP HEMT with 305 GHz f/sub T/ and 340 GHz f/sub max/
3. InP-HEMT X-band Low-Noise Amplifier With Ultralow 0.6-mW Power Consumption
4. Electronic properties of two-dimensional systems
5. Intersubband absorption linewidth in GaAs quantum wells due to scattering by interface roughness, phonons, alloy disorder, and impurities
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Growth condition optimization and mobility enhancement through inserting AlAs monolayer in the InP-based In x Ga 1− x As/In 0.52 Al 0.48 As HEMT structures;Chinese Physics B;2016-08-30
2. Structural and electrophysical properties of In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As/InP HEMT nanoheterostructures with different combinations of InAs and GaAs inserts in quantum well;Crystallography Reports;2015-05
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