Some effects of indium composition on pseudomorphic modulation-doped heterostructures grown by molecular beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference11 articles.
1. High-gain W band pseudomorphic InGaAs power HEMTs
2. Low temperature microwave characteristics of 0.1μm gate-length pseudomorphic In/sub 0.52/Al/sub 0.48/As/In/sub x/Ga/sub 1-x/As (x=0.85 and 0.95) MODFET's
3. Molecular-beam epitaxial growth and characterization of pseudomorphic GaInAs/AlInAs modulation-doped heterostructures
4. Low‐ and high‐field transport properties of pseudomorphic InxGa1−xAs/In0.52Al0.48As (0.53≤x≤0.65) modulation‐doped heterostructures
5. Achievement of exceptionally high mobilities in modulation-doped Ga1−xInxAs on InP using a stress compensated structure
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Growth and characterization of InGaAs/InAlAs/InP high-electron-mobility transistor structures towards high channel conductivity;Journal of Crystal Growth;1998-03
2. Pseudomorphic InxGa1–xAs/In0.52Al0.48As modulation doped heterostructures grown by LP-MOVPE;Electronics Letters;1998
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