Optimization of GaAs epitaxy on CaF2/Si(111) substrates
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference13 articles.
1. Strain in Epitaxial GaAs on Si and CaF2/Si
2. Strain in epitaxial GaAs on CaF2/Si(111)
3. The surface energy of Si, GaAs, and GaP
4. Direct Measurements of the Surface Energies of Crystals
5. Effect of Substrate Off-Orientation on GaAs/CaF2/Si(111) Structure with Rotational Twin
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1. Vapor Epitaxy of Fluorides on Semiconductors;Reference Module in Materials Science and Materials Engineering;2016
2. Vapor Epitaxy of Fluorides on Semiconductors;Encyclopedia of Materials: Science and Technology;2001
3. Growth of novel broadband high reflection mirrors by molecular beam epitaxy;Journal of Crystal Growth;1999-05
4. Effects of the Two-Step Growth Method for GaAs Grown on CaF2/Si(111) with the Electron Beam Surface Modification Technique;Japanese Journal of Applied Physics;1999-03-15
5. Surface free energy modification of CaF2 by atomic-height island formation on heteroepitaxy of GaAs on CaF2;Applied Surface Science;1998-06
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