Surface free energy modification of CaF2 by atomic-height island formation on heteroepitaxy of GaAs on CaF2
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry
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5. Formation of GaAs-on-Insulator Structures on Si Substrates by Heteroepitaxial Growth of CaF2and GaAs
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. First principle study of MF2 (M=Mg, Ca, Sr, Ba, Ra) compounds;Computational Materials Science;2014-01
2. Growth and structure of epitaxial Al and Cu films on CaF2;Thin Solid Films;2003-10
3. Epitaxial Al and Cu films grown on CaF2/Si(111);MRS Proceedings;2000
4. Heteroepitaxy of GaAs on CaF2/Si(111) By Surface Free Energy Modulation Method;MRS Proceedings;1998
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