Growth of novel broadband high reflection mirrors by molecular beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference8 articles.
1. Semiconductor saturable absorber mirrors supporting sub-10-fs pulses
2. Wide bandwidth (100) GaAs/fluorides quarter‐wavelength Bragg reflectors grown by molecular beam epitaxy
3. Thick crack-free CaF2 epitaxial layer on GaAs (100) substrate by molecular beam epitaxy
4. Lattice and thermal misfit dislocations in epitaxialCaF2/Si(111) andBaF2-CaF2/Si(111) structures
5. Nucleation of GaAs on CaF2/Si(111) substrates
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1. Thermal scaling laws of the optical Bragg acceleration structure;Physical Review Special Topics - Accelerators and Beams;2006-05-23
2. Fluoride semiconductor saturable-absorber mirror for ultrashort pulse generation;Optics Letters;2002-10-15
3. Spectroscopy on Vertical Microcavities for the Mid-Infrared;physica status solidi (a);2001-12
4. GaAs absorber layer growth for broadband AlGaAs/fluoride SESAMs;Journal of Crystal Growth;2001-07
5. Epitaxial Bragg mirrors for the mid-infrared and their applications;Progress in Quantum Electronics;2001
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