Wide bandwidth (100) GaAs/fluorides quarter‐wavelength Bragg reflectors grown by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.117256
Reference19 articles.
1. Low threshold half-wave vertical-cavity lasers
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3. Design of epitaxial AlGaAs multilayer structures: interference filters and optically controllable reflection modulators
4. Solid-state low-loss intracavity saturable absorber for Nd:YLF lasers: an antiresonant semiconductor Fabry–Perot saturable absorber
5. Solid-state low-loss intracavity saturable absorber for Nd:YLF lasers: an antiresonant semiconductor Fabry–Perot saturable absorber
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3. BaCaF2/III–V semiconductor broadband distributed Bragg reflectors for long-wavelength VCSEL and SESAM devices;Applied Physics B;2014-09-27
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5. New regime of inverse saturable absorption for self-stabilizing passively mode-locked lasers;Applied Physics B;2005-02
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