Epitaxial overgrowth of II–VI compounds on patterned substrates-Reference-Cited by-同舟云学术

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Epitaxial overgrowth of II–VI compounds on patterned substrates

Published:1994-04 Issue:1-4 Volume:138 Page:8-13
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Schikora D.,Hausleitner H.,Einfeldt S.,Becker C.R.,Widmer Th.,Giftge C.,Lübke K.,Lischka K.,von Ortenberg M.,Landwehr G.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference10 articles.

1. High quality molecular beam epitaxial growth on patterned GaAs substrates

2. Growth Rate and Sticking Coefficient of ZnSe and ZnTe Grown by Molecular Beam Epitaxy

3. Self-limiting monolayer epitaxy of wide gap II–VI superlattices

4. Developments and trends in MBE of II–VI Hg-based compounds

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1. Annealing of MBE-grown CdTe epitaxial layer at various tellurium overpressure for reduced defect density;Journal of Materials Science: Materials in Electronics;2024-05

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