Developments and trends in MBE of II–VI Hg-based compounds
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference29 articles.
1. Molecular beam epitaxy of II–VI compounds: CdxHg1−xTe
2. Latest developments in the growth of CdxHg1−xTe and CdTe–HgTe superlattices by molecular beam epitaxy
3. C. Vérié, F. Raymond and G. Neu, J. Vacuum Sci. Technol., in press.
4. CdxHg1−xTen‐type layers grown by molecular beam epitaxy
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1. MBE Growth of Mercury Cadmium Telluride;Mercury Cadmium Telluride;2010-09-04
2. Substrates for the Epitaxial Growth of MCT;Mercury Cadmium Telluride;2010-09-04
3. Molecular-Beam Epitaxial Growth of HgCdTe;Springer Handbook of Crystal Growth;2010
4. MCT properties, growth methods and characterization;Handbook of Infra-red Detection Technologies;2002
5. Intrinsic carrier concentration and electron effective mass in Hg1−xZnxTe;Journal of Applied Physics;1997-03
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