A morphological stability analysis of the growth interface during liquid phase electroepitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference31 articles.
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Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. References;Single Crystal Growth of Semiconductors from Metallic Solutions;2007
2. Liquid phase electro epitaxy growth kinetics of GaAs—A three-dimensional numerical simulation study;Materials Science and Engineering: B;2006-06
3. Numerical simulation of liquid phase electro-epitaxial selective area growth;Journal of Crystal Growth;2005-05
4. Investigations on liquid phase electroepitaxial growth kinetics of GaAs;Materials Science and Engineering: B;2004-09
5. Simulation studies on the liquid phase electroepitaxial growth of III–V compound semiconductors;Journal of Crystal Growth;2001-07
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