Selective area epitaxy of GaInAs using conventional and novel group III precursors
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference19 articles.
1. Non-planar and masked-area epitaxy by organometallic chemical vapour deposition
2. Selective area growth for opto-electronic integrated circuits (OEICs)
3. Integrated optic mode‐size tapers by selective organometallic chemical vapor deposition of InGaAsP/InP
4. Selective and non-planar epitaxy of InP, GaInAs and GaInAsP using low pressure MOCVD
5. Selective organometallic vapor phase epitaxy of Ga and In compounds: a comparison of TMIn and TEGa versus TMIn and TMGa
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4. Epitaxial growth of three-dimensionally architectured optoelectronic devices;Nature Materials;2011-07-24
5. Selective Area Metal–Organic Vapor Phase Epitaxy of Nitride Semiconductors for Multicolor Emission;IEEE Journal of Selected Topics in Quantum Electronics;2009-07
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