Study of silicon incorporation from SiH4 in GaAs layers grown by metalorganic vapor phase epitaxy using tertiarybutylarsine
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference21 articles.
1. Epitaxial growth of high‐mobility GaAs using tertiarybutylarsine and triethylgallium
2. Use of tertiarybutylarsine in the metalorganic chemical vapor deposition growth of GaAs
3. Carbon acceptor incorporation in GaAs grown by metalorganic chemical vapor deposition: Arsine versus tertiarybutylarsine
4. Comparison of gallium and arsenic precursors for GaAs carbon doping by organometallic vapor phase epitaxy using CCl4
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1. Comprehensive growth and characterization study on highly n-doped InGaAs as a contact layer for quantum cascade laser applications;Semiconductor Science and Technology;2018-04-16
2. The Science and Practice of Metal-Organic Vapor Phase Epitaxy (MOVPE);Handbook of Crystal Growth;2015
3. Effects of V/III ratio on InGaAs and InP grown at low temperature by LP-MOCVD;Journal of Crystal Growth;2004-01
4. Comparison of MOVPE grown GaAs solar cells using different substrates and group-V precursors;Journal of Crystal Growth;2003-01
5. Effect of the carrier gas and the group-V precursor on the doping efficiency of SiH4 for InP and In0.54Ga0.46As/InP in LP-MOVPE;Journal of Crystal Growth;2001-11
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