Composition and thickness control of CdxHg1-xTe layers grown by open tube isothermal vapour phase epitaxy-Reference-Cited by-同舟云学术

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Composition and thickness control of CdxHg1-xTe layers grown by open tube isothermal vapour phase epitaxy

Published:1987-05 Issue:1 Volume:83 Page:122-126
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Piotrowski J.,Djurić Z.,Galus W.,Jović V.,Grudzień M.,Djinović Z.,Nowak Z.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference10 articles.

1. Isothermal Growth of HgCdTe under Controlled Hg Vapor Pressure

2. Open‐tube isothermal vapor phase epitaxy of Hg1−xCdxTe on CdTe

3. Open-tube vapor transport epitaxy of Hg1−xCdxTe

4. High‐performance photovoltaic infrared devices in Hg1−xCdxTe on GaAs

5. Isothermal vapor‐phase epitaxy of Hg1−xCdxTe on CdTe and Al2O3substrates

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