High‐performance photovoltaic infrared devices in Hg1−xCdxTe on GaAs
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.95861
Reference16 articles.
1. Molecular beam epitaxial growth of high structural perfection, heteroepitaxial CdTe films on InSb (001)
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4. Growth of CdTe films on silicon by molecular beam epitaxy
5. Study of the initial stages of growth of CdTe on (001)GaAs
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2. Optical and microstructural characterization of the effects of rapid thermal annealing of CdTe thin films grown on Si (100) substrates;Journal of Electronic Materials;2005-06
3. Effect of CdTe Layer Thickness on Hg1-xCdxTe Epilayer Growth by Isothermal Vapor Phase Epitaxy Using (100) CdTe/GaAs Substrates and Void Formation at the Interface;Japanese Journal of Applied Physics;1998-07-15
4. Photovoltaic IR detectors;Narrow-gap II–VI Compounds for Optoelectronic and Electromagnetic Applications;1997
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