Abstract
AbstractIn Poland, the HgCdTe studies began in 1960 at the Institute of Physics, Warsaw University. The material processing laboratory was created by Giriat and later by Dziuba, Gałązka, and others. Bridgman technique with sealed thick wall quartz ampoules was used to grow material suitable for research and experimental devices. Among the first papers published in 1961 and 1963 there were the Polish works devoted to preparation, doping, and electrical properties of HgCdTe.Infrared detector’s research and development efforts in Poland were concentrated mostly on uncooled market niche. At the beginning, a modified isothermal vapour phase epitaxy has been used for research and commercial fabrication of photoconductive, photoelectromagnetic and other HgCdTe devices. Bulk growth and liquid phase epitaxy were also used. Recently, the fabrication of infrared devices relies on low temperature epitaxial technique, namely metalorganic vapour phase deposition.At present stage of development, the photoconductive and photoelectromagnetic (PEM) detectors are gradually replaced with photovoltaic devices which offer inherent advantages of no electric or magnetic bias, no heat load and no flicker noise. Potentially, photodiodes offer high performance and very fast response. However, conventional photovoltaic uncooled detectors suffer from low quantum efficiency and very low junction resistance. The problems have been solved with advanced band gap engineered architecture, multiple cell heterojunction devices connected in series, and monolithic integration of the detectors with microoptics.In final part of the paper, the Polish achievements in technology and performance of HgMnTe and HgZnTe photodetectors are presented.
Subject
Electrical and Electronic Engineering,Radiation,General Materials Science
Reference31 articles.
1. MOCVD growth of xCdxTe heterostructures for uncooled infrared photodetectors;Piotrowski;Opto Electr Rev,2004
2. CdxHg xTe layers as infrared detectors th IMEKO Technical Committee on Photon De tectors pp IMEKO Secretariat Siofok Budapest;Igras;Proc,1974
3. HgCdTe infrared detector material : History sta tus and outlook;Rogalski;Rep Prog Phys,2005
4. Modification of mercury cadmium telluride mercury manganese tellurium and mercury zinc telluride by ion etching a The p to n conversion of HgCdTe HgZnTe and HgMnTe by anodic oxidation and subsequent heat treatment;Brogowski;Phys Stat Sol Semicond Sci Tech,1989
5. Dependence of the energy gap on composition in HgZnTe alloys and their electrical and photoelectrical properties ( in Polish;Nowak;Biul WAT,1974
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