The growth properties of SiGe films on Si(100) using Si2H6 gas and Ge solid source molecular beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference16 articles.
1. Selective heteroepitaxial growth of Si1−xGexusing gas source molecular beam epitaxy
2. Spectral blue shift of photoluminescence in strained‐layer Si1−xGex/Si quantum well structures grown by gas‐source Si molecular beam epitaxy
3. Cooperative growth phenomena in silicon/germanium low‐temperature epitaxy
4. Selective epitaxial growth of Si1−xGex by cold-wall ultrahigh vacuum chemical vapor deposition using disilane and germane
5. A one-dimensional SiGe superlattice grown by UHV epitaxy
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2. In situ doping control for growth of n–p–n Si/SiGe/Si heterojunction bipolar transistor by gas source molecular beam epitaxy;Journal of Crystal Growth;2005-01
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