Investigation of Zn diffusion in InP using dimethylzinc as Zn source
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference20 articles.
1. Growth and characterization of InP using metalorganic chemical vapor deposition at reduced pressure
2. A study of p-type dopants for InP grown by adduct MOVPE
3. Doping optimization in InGaAsP DH lasers and improved characteristics in BH lasers grown by MOVPE
4. Doping studies for InP grown by organometallic vapor phase epitaxy
5. Activation of Zn and Cd acceptors in InP grown by metalorganic vapor phase epitaxy
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1. Zn doping of InAlAs and InP epitaxial layers from a planar Zn3P2 source;Journal of Optical Technology;2024-02-01
2. Single-step metal-organic vapor-phase diffusion for low-dark-current planar-type avalanche photodiodes;Journal of the Korean Physical Society;2016-10
3. InP nanowire p-type doping via Zinc indiffusion;Journal of Crystal Growth;2016-10
4. Reduction of surface defects on the GaP window layer of 630 nm AlGaInP LED using post-Zn diffusion process;Current Applied Physics;2013-08
5. Diffusion of zinc into InP with an unprotected surface;Semiconductors;2004-01
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