Mass spectrometric study of the reaction of trimethylgallium and GaAs
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference6 articles.
1. Deposition Mechanism of GaAs Epitaxy
2. Selective growth of GaAs in the MOMBE and MOCVD systems
3. Bonding direction and surface‐structure orientation on GaAs (001)
4. Dynamics of film growth of GaAs by MBE from Rheed observations
5. Analysis of GaAs MOMBE Reactions by Mass Spectrometry
Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Selective-area metalorganic molecular beam epitaxy of GaAs using metalorganic chloride gallium precursors;Journal of Crystal Growth;1997-12
2. A detailed time of flight study of the cracking pattern of trimethylgallium; implications for MOMBE growth;Journal of Crystal Growth;1996-07
3. Accounting for stoichiometry changes on compound semiconductor surfaces;Journal of Crystal Growth;1995-01
4. Surface stoichiometry and the role of adsorbates during GaAs atomic layer epitaxy;Applied Surface Science;1994-12
5. Large difference in the decomposition rate of metalorganics between on As- and Ga-saturated GaAs (111)B surfaces;Journal of Crystal Growth;1991-12
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