Growth and silicon doping of AlxGa1−xP on GaP by gas source molecular beam epitaxy-Reference-Cited by-同舟云学术

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Growth and silicon doping of AlxGa1−xP on GaP by gas source molecular beam epitaxy

Published:1990-10 Issue:1-4 Volume:105 Page:106-110
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Baillargeon J.N.,Cheng K.Y.,Hsieh K.C.,Wei C.L.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference5 articles.

1. Luminescence and the Light Emitting Diode;Williams,1978

2. Proc. 1981 Conf. on High-Temperature Electronics;Nieberging,1981

3. Proc. 1981 Conf. on High-Temperature Electronics;Jurgens,1981

4. Proc. 1981 Conf. on High-Temperature Electronics;Chaffin,1981

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Optimization of the properties of MOVPE-grown GaP epitaxial layers on GaP (1 1 1)B substrates;Semiconductor Science and Technology;2008-05-29

2. Optical properties of AlxGa1−xP (0⩽x⩽0.52) alloys;Journal of Applied Physics;2000-02

3. Si and Zn doping of GaP grown by OMVPE using tertiarybutylphosphine;Journal of Crystal Growth;1996-01

4. OMVPE growth and characterization of AlxGa1−xP(0≤x≤1) using tertiarybutylphosphine;Journal of Crystal Growth;1993-03

5. Doping During GSMBE;Gas Source Molecular Beam Epitaxy;1993

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