Si and Zn doping of GaP grown by OMVPE using tertiarybutylphosphine
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference19 articles.
1. Proposal and Experimental Results of Disordered Crystalline Semiconductors
2. Strong photoluminescence from AlP/GaP disordered superlattice grown by atmospheric pressure organometallic vapor phase epitaxy using tertiarybutylphosphine
3. Short-Period Superlattices of (GaP)n(AlP)nGrown by Metalorganic Vapor Phase Epitaxy
4. Gas source molecular beam epitaxy growth of short period GaP/AlP(001) superlattices
5. Organometallic Vapor Phase Epitaxy: Theory and Practice;Stringfellow,1989
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